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MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
200
V
Average Rectified Forward Current
(Rated VR, TC
= 140
°C)
Per Diode
Per Device
IF(AV)
3.0
6.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC
= 145
°C)
Per Diode
IF
6.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
IFSM
50
A
Operating Junction and Storage Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Case
RJC
9
°C/W
Thermal Resistance, Junction?to?Ambient (Note 1)
RJA
80
°C/W
1. Rating applies when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF
= 3 Amps, T
C
= 25
°C)
(iF
= 3 Amps, T
C
= 125
°C)
(iF
= 6 Amps, T
C
= 25
°C)
(iF
= 6 Amps, T
C
= 125
°C)
vF
1
0.96
1.2
1.13
V
Maximum Instantaneous Reverse Current (Note 2)
(TJ
= 25
°C, Rated dc Voltage)
(TJ
= 125
°C, Rated dc Voltage)
iR
5
250
A
Maximum Reverse Recovery Time
(IF
= 1 Amp, di/dt = 50 Amps/
s, VR
= 30 V, T
J
= 25
°C)
(IF
= 0.5 Amp, i
R
= 1 Amp, I
REC
= 0.25 A, V
R
= 30 V, T
J
= 25
°C)
trr
35
25
ns
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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